尹以安，女，博士，研究生导师，工学部半导体科学与技术学院，迪优未来科技（清远）有限公司总经理，创始人。
2008年厦门大学半导体物理专业博士毕业。2011-2013在美国Unversity of South Dakato 物理系作访问学者（在访问学者期间主要开发大尺寸的高纯锗及同步辐射探测器的研制）。多年来专注半导体材料与器件的基础科学、工程技术(晶圆/芯片/专利)和产业应用领域的创新研究。主要研究方向包括第三代半导体/宽禁带半导体(GaN)的外延生长与掺杂机制、器件设计与模拟仿真、芯片制造与模块集成封装，成功研发了一系列蓝、绿紫外LED、肖特基二极管(SBD)、HEMT器件。自主研发的高效深紫外LED芯片，依托大数据支撑，并加入物联网技术，应用于个人及家用的消毒杀菌产品。广东卫视对该产业化技术并做了相关报道。在学术期刊已发表SCI论文50余篇，申请发明专利50多件，授权20件，实用新型授权15件。主持包括广东省科技计划、广东省自然科学基金、广东省产学研、广州市科技计划等在内的多个科研项目。个人项目成果入选了广东高校高质量科技成果库。
联系方式: yinya@scnu.edu.cn
座 机 号：020-85212667-809
主要工作和学习经历：
2003/9 - 2008/8，厦门大学，半导体物理，博士
2011/1 - 2013/1，美国南科达大学，物理系，访问学者
2008/9 - 至今，华南师范大学半导体科学技术研究院，研究员，硕士生导师
2020.9-至今，迪优未来科技（清远）有限公司，总经理，创始人
研究方向
宽禁带半导体功率器件、射频器件的外延生长、工艺制备及理论计算；半导体光电子器件研发、芯片制造与模块集成封装
主讲课程
《电路分析基础》，《半导体器件工艺基础》
科研项目
1. 产业化项目，基于高性能和高效深紫外LED的杀菌消毒应用产品的开发，主持
2. 企业横向项目，基于大尺寸的GaN材料与器件的制造与工艺关键技术开发，主持
3. 广东省教育厅项目，基于高性能和高效深紫外LED杀菌消毒应用产品的开发，主持
4.广东省科技计划重大项目，通信照明共用的白光LED器件和集成模块关键技术的开发，负责人之一。
5. 广州市科技计划一般项目，极化诱导掺杂Al（Ga）InN及其增强紫外LED发光效率研究
6. 广东省公益能力与建设专项资金项目，面向高效紫外光 AlGa(In)N材料的极化掺杂及改善器件性能研究，主持
7. 广东省省部产学研项目，高亮度功率AlGaInP四元系LED芯片结构设计及制备，主持
8. 广东省自然科学基金项目，基于AlInN材料的高质量P型掺杂及紫外LED的研制，主持
获奖
1. 专利成果入选广东高校高质量科技成果库
2. 应用专利成果：十二届“挑战杯”广东大学生创业大赛大学生创业计划竞赛，荣获银奖。创业大赛题目：环保高效深紫外LED杀菌技术应用的领航者
3. 应用专利成果：十三届“挑战杯”广东大学生创业大赛大学生创业计划竞赛，荣获银奖。创业大赛题目：深紫先峰-紫外LED光子消杀领域的领航者
相关发表的论文：
1. Jialin Li, YiAn Yin*, Fengbo Liao, Mengxiao Lian, Xichen Zhang, Keming Zhang , Yafang Xie, You Wu, Bingzhi Zou, Zhixiang Zhang, Jingbo Li,2.57GW/cm2 normally-off composite stepped gate GaN-based HEMT with p-GaN buried layer and field plate,Materials Science in Semiconductor Processing,(2022.10)
2. Jialin Li, YiAn Yin*, Fengbo Liao, Mengxiao Lian, Xichen Zhang, Keming Zhang, Yafang Xie,You Wu, Bingzhi Zou, Zhixiang Zhang, Jingbo Li,Research on the effect of gate etching depth on the performance of GaN-based HEMTs under medium source-drain etching,Micro and Nanostructures,(2022.5)
3. Keming Zhang,YiAn Yin*,Fengbo Liao, Mengxiao Lian, Jialin Li, Xichen Zhang, Performance enhancement of deep-ultraviolet LEDs by using quaternary AlInGaN polarization-engineered multiple-symmetrical-stair quantum barriers without electron blocking layer, applied optics,(2022.5)
4. Fengbo Liao,YiAn Yin*,Keming Zhang,Ni Zeng,Mengxiao Lian,Jialin Li,Xichen Zhang, Ziwei Tian, 2.2 kV Breakdown Voltage AlGaN/GaN Schottky Barrier Diode with Polarization Doping Modulated 3D Hole Gas Cap Layer and Polarization Junction Structure, Journal of Electronic Materials(2022.3)
5. Jialin Li, YiAn Yin*, Ni Zeng, Fengbo Liao, Mengxiao Lian, Xichen Zhang, Keming Zhang, Jingbo Li，Normally-off AlGaN/AlN/GaN HEMT with a composite recessed gate,Superlattices and Microstructures,(2021.10)
6. Fengbo Liao,YiAn Yin*,Keming Zhang,Ni Zeng,Mengxiao Lian,Jialin Li,Xichen Zhang, Wu Qi-bao, The Effects of Polarization‑Modulated Quaternary AlInGaN Barriers in Deep‑UV‑LED, Journal of Electronic Materials (2021.9)
7. Jialin Li , YiAn Yin*, Ni Zeng , Fengbo Liao , Mengxiao Lian, Xichen Zhang, Keming Zhang , Yong Zhang and Jingbo Li, A dual-gate and Γ-type field plate GaN base E-HEMT with high breakdown voltage on simulation investigation, Semiconductor Science and Technology,(2021.8)
8. Shaohua Cai, Dunnian Wang, YiAn Yin*, Influence of multiple quantum well number on modulation bandwidth of InGaN/GaN light-emitting diodes，J Opt（2021.1）
9. Kai Li, Ni Zeng, Fengbo Liao, YiAn Yin*, Investigations on deep ultraviolet lightemitting diodes with quaternary AlInGaN streamlined quantum barriers for reducing polarization effect, Superlattices and Microstructures (2020)
10. Ni Zeng , Yi’an Yin*, Kai Li , Fengbo Liao and Huolin Huang,Polarization Doping Modulated Heterojunction Electron Gas in AlGaN/GaN CAVETs[J]. Semiconductor ence and Technology, 2020.
11. Ximeng Chen, Yi’an Yin*, Dunnian Wang, and Guanghan Fan,Investigation of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes with AlInGaN/AlInGaN Superlattice Electron Blocking Layer[J]. Journal of Electronic Materials, Vol. 48, No. 4, 2019.
12. Huifeng Fang, Huaimin Gu, Guanghan Fan,Tao Zhang, Shuwen Zheng, Yi’an Yin,The static and dynamic analysis of GaN-based blue light-emitting diodes used in visible light communication[J]. Journal of Optics, 2019, 48(4):486-490.
13. Dunnian Wang,Yi’an Yin*, and Ximeng Chen,Improvement of Output Power of AlGaN-Based Ultraviolet Light Emitting Diodes with Sawtooth Barriers[J]. Journal of Electronic Materials, Vol. 48, No. 7, 2019.
14. Li Liu, Yong Zhang, Yi’an Yin*,High quality (In)GaN films on homoepitaxial substrates[J]. Superlattices & Microstructures, 2017, 102(FEB.):166-172.
15. Shanlin Wang, Yi An Yin, Member, IEEE, Huaimin Gu, Naiyin Wang, Member, IEEE, and Li Liu ,Graded AlGaN/AlGaN Superlattice Insert Layer Improved Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes[J]. Journal of Display Technology, 2016, 12(10):1112-1116.
16. Yi An Yin, Naiyin Wang, Shuti Li, Yong Zhang, Guanghan Fan,Advantages of deep-UV AlGaN light-emitting diodes with an AlGaN/AlGaN superlattices electron blocking layer[J]. Applied Physics A, 2015, 119(1):41-44.
17. Naiyin Wang, Student Member, IEEE, Yi’an Yin*, Bijun Zhao, and Ting Mei, Senior Member, IEEE, Performance Analysis of GaN-Based Light-Emitting Diodes With Lattice-Matched InGaN/AlInN/InGaN Quantum-Well Barriers, JOURNAL OF DISPLAY TECHNOLOGY, VOL. 11, NO. 12, DECEMBER 2015
18. Yi An Yin, Naiyin Wang, Guanghan Fan, and Shuti Li ,Advantages of GaN-Based Light-Emitting Diodes With Polarization-Reduced Chirped Multiquantum Barrier[J]. IEEE Transactions on Electron Devices, 2014, 61(8):2849-2853.
19. Yi An Yin, Naiyin Wang , Guanghan Fan, Yong Zhang ,Investigation of AlGaN-based deep-ultraviolet light-emitting diodes with composition-varying AlGaN multilayer barriers[J]. Superlattices and Microstructures, 2014, 76(dec.):149-155.
20. Yun Yan Zhang,Yi’an Yin*Performance enhancement of blue light-emitting diodes with a special designed AlGaN/GaN superlattice electron-blocking layer[J]. Applied Physics Letters, 2011, 99(22):p.221103.1-221103.3.